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TK22E10N1 N-Channel Silicon MOSFET

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  1. Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V)
  2. Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
  3. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

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Brand: Generic
Category: Drivers & Interfaces IC
The TK22E10N1 N-Channel Silicon MOSFET is a 100V single N channel HEXFET power MOSFET. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications like switching voltage regulators.
Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability. 

 Features:

  1. Low drain-source on-resistance.
  2. Low leakage current.
  3. Enhancement mode.

Package Includes:

1 x TK22E10N1 N-Channel Silicon MOSFET.

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Country Of Origin: China

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