SQJ504EP-T1_GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 30 A, 30 A, 0.0061 ohm

SQJ504EP-T1_GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 30 A, 30 A, 0.0061 ohm.

Note: Images for reference only.

Specifications:

Channel Type: Complementary N and P Channel
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id P Channel: 30A
Drain Source On State Resistance P Channel: 0.0061ohm
No. of Pins: 8Pins
Power Dissipation P Channel: 34W
Product Range: TrenchFET Series
MSL: MSL 1 – Unlimited
Drain Source Voltage Vds N Channel: 40V
Continuous Drain Current Id N Channel: 30A
Drain Source On State Resistance N Channel: 0.0061ohm
Transistor Case Style: PowerPAK SO
Power Dissipation N Channel: 34W
Operating Temperature Max: 175°C
Qualification: AEC-Q101
SVHC: To Be Advised

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x SQJ504EP-T1_GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 30 A, 30 A, 0.0061 ohm