The IRF3205 is an N-channel MOS Field Effect Transistor designed for high-current switching applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This feature, combined with the fast switching speed and ruggedized device design, makes the IRF3205 Power MOSFET an extremely efficient and reliable device that can be used in a wide range of applications. The IRF3205 can be used in inverter applications, uninterruptible power supply, hard-switched and high-frequency circuits, and more.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Fast Switching
- Continuous drain current: 110 A
- Maximum Drain to source voltage: 55V
- Minimum gate threshold voltage: 2V
- Fully Avalanche Rated
- Low gate charge
- Operating Temperature: -55 to 125°C
Packages Includes:
1 x SME IRF3205 MOSFET
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