VISHAY 3368951 40

SIZ980BDT-T1-GE3-VISHAY-Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm

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SKU: R188192
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  1. MPN: SIZ980BDT-T1-GE3
  2. Brand: VISHAY

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Brand: VISHAY
Category: MOSFET

SIZ980BDT-T1-GE3-VISHAY-Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm.

Note: Images for reference only.

Specifications:

Channel Type: N Channel + Schottky
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id P Channel: 197A
Drain Source On State Resistance P Channel: 817µohm
No. of Pins: 8Pins
Power Dissipation P Channel: 66W
Product Range: TrenchFET Gen IV SkyFET Series
MSL: MSL 1 – Unlimited
Drain Source Voltage Vds N Channel: 30V
Continuous Drain Current Id N Channel: 197A
Drain Source On State Resistance N Channel: 817µohm
Transistor Case Style: PowerPAIR
Power Dissipation N Channel: 66W
Operating Temperature Max: 150°C
Qualification: –
SVHC: To Be Advised

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x SIZ980BDT-T1-GE3-VISHAY-Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm

SKU: R188192 Category:
1 Year Warranty

This item is covered with a supplier warranty of 1 year from the time of delivery against manufacturing defects only. In case of manufacturing defects or issues, we will replace the part after warranty confirmation by our technical team, but we won’t offer refunds or replace the entire product.

What voids the warranty:

If the product is subject to misuse, tampering, static discharge, accident, water or fire damage, use of chemicals & soldered or altered in any way.

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Datasheet

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Country Of Origin: China

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