MT28EW01GABA1HJS-0SIT is a parallel NOR flash-embedded memory. It is an asynchronous, uniform block, parallel NOR flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. Main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. End of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards. CE#, OE#, and WE# control the bus operation of the device and enable a simple connection to most microprocessors, often without additional logic.
Specifications:
IC Case / Package: TSOP
Operating Temperature Min: -40°C
No. of Pins: 56Pins
Product Range: 3V SLC NOR Flash Memories
IC Mounting: Surface Mount
Operating Temperature Max: 85°C
Supply Voltage Min: 2.7V
Supply Voltage Max: 3.6V
Interfaces: Parallel
Memory Density: 1Gbit
Supply Voltage Nom: 3V
Memory Configuration: 64M x 16bit / 128M x 8bit
Package Includes:
1 x MT28EW01GABA1HJS-0SIT-MICRON-MT28EW01GABA1HJS-0SIT-Flash Memory, Parallel NOR, 1 Gbit, 64M x 16bit / 128M x 8bit, Parallel, TSOP, 56 Pins
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