MMBT5551-SEMTECH-160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS.160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
Note: Images for reference only.
Specifications:
Collector Cut-Off Current (Icbo): 50nA
Collector-Emitter Breakdown Voltage (Vceo): 160V
Power Dissipation (Pd): 350mW
DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
Collector Current (Ic): 600mA
Transition Frequency (fT): 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
Transistor Type: NPN
Operating Temperature: –
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x MMBT5551-SEMTECH-160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
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