FDS4935A-onsemi-Dual MOSFET, P Channel, 30 V, 7 A.30V 7A 900mW 23mΩ@7A,10V 3V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS
Note: Images for reference only.
Specifications:
Drain Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 7A
Power Dissipation (Pd): 900mW
Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@7A,10V
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Type: 2 P-Channel
Input Capacitance (Ciss@Vds): 1.233nF@15V
Total Gate Charge (Qg@Vgs): 21nC@5V
Operating Temperature: -55℃~+175℃@(Tj)
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x FDS4935A-onsemi-Dual MOSFET, P Channel, 30 V, 7 A
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