FDG6335N-ONSEMI-Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm.
Note: Images for reference only.
Features:Â
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x FDG6335N-ONSEMI-Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
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