FDG6308P-onsemi-20V 600mA 400mΩ@600mA,4.5V 300mW 1.5V@250uA SC-88-6 MOSFETs ROHS.20V 600mA 400mΩ@600mA,4.5V 300mW 1.5V@250uA SC-88-6 MOSFETs ROHS
Note: Images for reference only.
Specifications:
Drain Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 600mA
Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@600mA,4.5V
Power Dissipation (Pd): 300mW
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Input Capacitance (Ciss@Vds): 153pF@10V
Total Gate Charge (Qg@Vgs): 2.5nC@4.5V
Operating Temperature: -55℃~+150℃@(Tj)
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x FDG6308P-onsemi-20V 600mA 400mΩ@600mA,4.5V 300mW 1.5V@250uA SC-88-6 MOSFETs ROHS
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