2N7002BKV,115-Nexperia-60V 340mA 1Ω@10V,500mA 350mW 2.1V@250uA 2 N-Channel SOT-666 MOSFETs ROHS.60V 340mA 1Ω@10V,500mA 350mW 2.1V@250uA 2 N-Channel SOT-666 MOSFETs ROHS
Note: Images for reference only.
Specifications:
Drain Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 340mA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,500mA
Power Dissipation (Pd): 350mW
Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds): 4pF@10V
Type: 2 N-Channel
Input Capacitance (Ciss@Vds): 50pF@10V
Total Gate Charge (Qg@Vgs): 600pC@4.5V
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x 2N7002BKV,115-Nexperia-60V 340mA 1Ω@10V,500mA 350mW 2.1V@250uA 2 N-Channel SOT-666 MOSFETs ROHS
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