SQJB60EP-T1_GE3-VISHAY-Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.01 ohm

SQJB60EP-T1_GE3-VISHAY-Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.01 ohm.

Note: Images for reference only.

Specifications:

Channel Type: N Channel
Drain Source Voltage Vds P Channel: 60V
Continuous Drain Current Id P Channel: 30A
Drain Source On State Resistance P Channel: 0.01ohm
No. of Pins: 6Pins
Power Dissipation P Channel: 48W
Product Range: TrenchFET Series
MSL: MSL 1 – Unlimited
Drain Source Voltage Vds N Channel: 60V
Continuous Drain Current Id N Channel: 30A
Drain Source On State Resistance N Channel: 0.01ohm
Transistor Case Style: PowerPAK SO
Power Dissipation N Channel: 48W
Operating Temperature Max: 175°C
Qualification: AEC-Q101
SVHC: No SVHC (10-Jun-2022)

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x SQJB60EP-T1_GE3-VISHAY-Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.01 ohm