SI4564DY-T1-GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm

SI4564DY-T1-GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm.

Note: Images for reference only.

Specifications:

Channel Type: Complementary N and P Channel
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id P Channel: 10A
Drain Source On State Resistance P Channel: 0.0145ohm
No. of Pins: 8Pins
Power Dissipation P Channel: 3.1W
Product Range: –
MSL: MSL 1 – Unlimited
Drain Source Voltage Vds N Channel: 40V
Continuous Drain Current Id N Channel: 10A
Drain Source On State Resistance N Channel: 0.0145ohm
Transistor Case Style: SOIC
Power Dissipation N Channel: 3.1W
Operating Temperature Max: 150°C
Qualification: –
SVHC: Lead (10-Jun-2022)

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x SI4564DY-T1-GE3-VISHAY-Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm