NTZD3155CT1G-ONSEMI-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm

NTZD3155CT1G-ONSEMI-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm.

Note: Images for reference only.

Specifications:

Channel Type: Complementary N and P Channel
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id P Channel: 540mA
Drain Source On State Resistance P Channel: 0.4ohm
No. of Pins: 6Pins
Power Dissipation P Channel: 250mW
Product Range: –
MSL: MSL 1 – Unlimited
Drain Source Voltage Vds N Channel: 20V
Continuous Drain Current Id N Channel: 540mA
Drain Source On State Resistance N Channel: 0.4ohm
Transistor Case Style: SOT-563
Power Dissipation N Channel: 250mW
Operating Temperature Max: 150°C
Qualification: –
SVHC: No SVHC (23-Jan-2024)

For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x NTZD3155CT1G-ONSEMI-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm