ONSEMI 1471045

FDG6332C-ONSEMI-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm

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SKU: R188122
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  1. Mpn: FDG6332C
  2. Brand: ONSEMI

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Brand: ONSEMI
Category: MOSFET

The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.

Image For reference only. 

Specifications: 

  1. Transistor Polarity: Complementary N and P Channel
  2. Drain Source Voltage Vds: 20V
  3. Continuous Drain Current Id: 700mA
  4. On Resistance Rds(on): 0.18ohm
  5. Continuous Drain Current Id P Channel: 700mA
  6. Drain Source On State Resistance N Channel: 0.18ohm
  7. Drain Source On State Resistance P Channel: 0.18ohm
  8. Gate Source Threshold Voltage Max: 1.1V
  9. Power Dissipation Pd: 300mW

For detailed specifications, please refer to datasheet in Attachments.

Package Includes: 

1 x FDG6332C-ONSEMI-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm

SKU: R188122 Category:
Manufacturer:

ONSEMI
Voltage Rating (V):

20
Current Rating (A):

700m
Resistance (Ohm):

0.18
Channel Type

P Channel
Shipping Weight 0.01 kg
Shipping Dimensions 10 × 8 × 4 cm
1 Year Warranty

This item is covered with a supplier warranty of 1 year from the time of delivery against manufacturing defects only. In case of manufacturing defects or issues, we will replace the part after warranty confirmation by our technical team, but we won’t offer refunds or replace the entire product.

What voids the warranty:

If the product is subject to misuse, tampering, static discharge, accident, water or fire damage, use of chemicals & soldered or altered in any way.

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Datasheet

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Country Of Origin: China

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