DMN63D8LV-7-Diodes Incorporated-30V 260mA 450mW 2.8Ω@10V,200mA 1.5V@250uA 2 N-Channel SOT-563 MOSFETs ROHS.30V 260mA 450mW 2.8Ω@10V,200mA 1.5V@250uA 2 N-Channel SOT-563 MOSFETs ROHS
Note: Images for reference only.
Specifications:
Drain Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 260mA
Power Dissipation (Pd): 450mW
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8Ω@10V,200mA
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Type: 2 N-Channel
Input Capacitance (Ciss@Vds): 22pF@25V
Total Gate Charge (Qg@Vgs): 870pC@10V
Operating Temperature: -55℃~+150℃@(Tj)
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x DMN63D8LV-7-Diodes Incorporated-30V 260mA 450mW 2.8Ω@10V,200mA 1.5V@250uA 2 N-Channel SOT-563 MOSFETs ROHS
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