DS1220AD-200IND+-ANALOG DEVICES-NVRAM, SRAM, 16 Kbit, 2K x 8bit, 200 ns, EDIP.The DS1220AD-200IND+ is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.
Note: Images for reference only.
Specifications:
Memory Type:: SRAM
Memory Size:: 16Kbit
NVRAM Memory Configuration:: 2K x 8bit
Access Time:: 200ns
Memory Case Style:: EDIP
No. of Pins:: 24Pins
Supply Voltage Min:: 4.5V
Supply Voltage Max:: 5.5V
Operating Temperature Min:: -40°C
Operating Temperature Max:: 85°C
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x DS1220AD-200IND+-ANALOG DEVICES-NVRAM, SRAM, 16 Kbit, 2K x 8bit, 200 ns, EDIP
There are no reviews yet.